色天使av,99热久久精里都是精品6,午夜日韩在线,亚洲一区中文字幕在线,www.俺高潮了.com,夜夜爽少妇777777,婷婷伊人五月色噜噜精品一区

Your Position: Home > Support > Service Center

Microsoft joined a new generation of DRAM groups of HMCC reason

2012/8/16??????view:

  In May 8, 2012, promote the use of TSV ( TSV ) 3D laminated to a new generation of DRAM " Hybrid Memory Cube ( HMC ) Hybrid Memory Cube Consortium " popularity ( HMCC ) announced that the United States, software giant Microsoft has joined the association.

  HMC is the three-dimensional structure, the logic chip along the vertical direction superposition of multiple DRAM chips, and then through the TSV connection wiring technology. HMC 's biggest characteristic is compared with existing DRAM, performance can be greatly improved. The reasons there are two, one is between chips from semiconductor package wiring distance on a board on the traditional methods of " cm " units are substantially reduced to dozens ofμ m~ 1mm; two is on a chip to form 1000 to tens of thousands of TSV, realize the multipoint connection chip.

  Microsoft 's accession to the HMCC, because we are considering how to corresponding is likely to become a personal computer and a computer to improving the performance of " memory bottleneck " problem. Memory bottleneck refers to as the microprocessor performance through multiple nucleation and constantly improve, the architecture of the DRAM performance will not be able to meet the need of processor. If do not solve this problem, can occur even if the computer new product, the actual performance is also not appropriate promotion situation. Compared with it, if the TSV based on the application of HMC in computer main memory, the data transmission speed can be increased to the current DRAM is about 15 times, therefore, is not just a giant Microsoft, American companies such as Intel are also active in research using HMC.

  In fact, plans to use TSV not only for HMC and other DRAM products. According to the semiconductor manufacturers plan, in the next few years, borne from electronic equipment input function of the CMOS sensor to the responsible for the operations of FPGA and multi core processor, and in charge of product storage of DRAM and NAND flash will have to import TSV. If the plan goes ahead, TSV will assume the input, operation, storage and other electronic equipment main function.

增城市| 彝良县| 宜黄县| 日喀则市| 山西省| 康乐县| 沧州市| 桂阳县| 新邵县| 获嘉县| 泸定县| 婺源县| 栾城县| 镇巴县| 九寨沟县| 盐亭县| 潼南县| 灵石县| 武义县| 凤山市| 依安县| 筠连县| 仪征市| 平远县| 鲜城| 北海市| 城固县| 永年县| 神农架林区| 简阳市| 建瓯市| 房产| 耿马| 阿拉善盟| 九江市| 湾仔区| 蓝田县| 神农架林区| 中宁县| 咸宁市| 平凉市|